QPD2195
400ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor
Single-Ended Evaluation Board Performance Plots
Gain vs. Output Power
Drain Efficiency vs. Output Power
VD = +48 V, IDQ = 720 mA
Pulsed CW: 10% Duty Cycle, 100 µs Width
24
23
22
21
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
VD = +48 V, IDQ = 720 mA
Pulsed CW: 10% Duty Cycle, 100 µs Width
Temp. = +25°C
1800 MHz
1840 MHz
2110 MHz
2170 MHz
1880 MHz
2140 MHz
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
Temp. = +25°C
54 56 58
42
44
46
48
50
52
54
56
58
42
44
46
48
50
52
Output Power (dBm)
Output Power (dBm)
Gain vs. Average Output Power
Drain Efficiency vs. Average Output Power
VD = +48 V, IDQ = 720 mA
24
23
22
21
20
19
18
17
16
15
14
13
12
60
50
40
30
20
10
0
Temp. = +25°C
VD = +48 V, IDQ = 720 mA
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
1800 MHz
1880 MHz
2140 MHz
1840 MHz
2110 MHz
2170 MHz
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
Temp. = +25°C
30 32 34 36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
30 32 34 36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Peak Power vs. Average Output Power
ACPR vs. Average Output Power
60
58
56
54
52
50
48
46
44
42
40
38
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
Temp. = +25°C
VD = +48 V, IDQ = 720 mA
VD = +48 V, IDQ = 720 mA
Temp. = +25°C
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
30 32 34 36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
30 32 34 36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 720ꢀmA, T = 25°C, on Class AB single-ended EVB
- 5 of 12 -
Rev. A
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