QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Thermal and Reliability Information - CW
Max Channel Temperature vs. Power
Surface of QFN Package Fixed at 85C
275
250
225
200
175
150
125
100
75
QPD1020
1E6 Hour Operating Limit
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
CW Power Dissipation [W]
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
7.9
185
1.7E8
5.3
°C/W
°C
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
85 °C Case
Hrs
°C/W
°C
12.6 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
152
8.6
°C/W
°C
229
4.1E6
5.5
85 °C Case
Hrs
°C/W
°C
16.8 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
177
9.4
°C/W
°C
282
9.5E4
5.9
85 °C Case
Hrs
°C/W
°C
21 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Notes
208
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise
noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 13 of 22 -
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
