QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Thermal and Reliability Information – Pulsed1, 2, 3, 4
Maximum Channel Temperature vs. Pulse Width vs. Pdiss
20% Duty Cycle, QFN base fixed at 85 oC
300
280
260
240
220
200
180
160
140
120
Pdiss = 27.3 W
Pdiss = 25.2 W
Pdiss = 23.1 W
1E6 Operating Hour Limit
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
Pulse Width [sec]
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
5.9
221
3.8E7
3.8
°C/W
°C
85 °C Case
Hrs
°C/W
°C
23.1 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
173
6.0
°C/W
°C
237
1.1E7
3.85
182
6.2
85 °C Case
Hrs
°C/W
°C
25.2 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
°C/W
°C
253
3.4E6
3.9
85 °C Case
Hrs
°C/W
°C
27.3 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Notes
191
1. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle.
2. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise
noted, all thermal references are FEA.
3. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability.
4. Thermal resistance measured to backside of package.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
