QPD1016
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
Power Driveup Performance Over Temperatures Of 1.2 – 1.4 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 1000 mA, 300 uS Pulse Width, 10% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network.
P3dB Over Temperatures
DEFF3dB Over Temperatures
800
750
700
650
600
550
500
450
400
350
300
100
90
80
70
60
50
40
30
20
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
1.15
1.2
1.25
1.3
1.35
1.4
1.45
1.15
1.2
1.25
1.3
1.35
1.4
1.45
Frequency [GHz]
Frequency [GHz]
Pdiss3dB Over Temperatures
G3dB Over Temperatures
460
440
420
400
380
360
340
320
300
280
260
240
220
200
22
21
20
19
18
17
16
15
14
13
12
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
300uS, 10% Limit @ 85°C base
1.15
1.2
1.25
1.3
1.35
1.4
1.45
1.15
1.2
1.25
1.3
1.35
1.4
1.45
Frequency [MHz]
Frequency [GHz]
Datasheet Rev. A, December 16, 2016 | Subject to change without
notice
www.qorvo.com
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
