QPD1016
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 1000 mA, 300 uS Pulse Width, 10% Duty Cycle
2. See page 19 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
1.5 GHz - Power Tuned
Gain and PAE vs. Output Power
1.5 GHz - Efficiency Tuned
27
26
25
24
23
22
21
20
19
18
17
100
90
80
70
60
50
40
30
20
10
0
28
27
26
25
24
23
22
21
20
19
18
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 0.51-1.43i
Zs(2fo) = 1.66-0.36i
Zs(3fo) = 3.88-0.01i
Zl(1fo) = 1.75-0.95i
Zl(2fo) = 1.9+0.4i
Zs(1fo) = 0.51-1.43i
Zs(2fo) = 1.66-0.36i
Zs(3fo) = 3.88-0.01i
Zl(1fo) = 1.65-0.24i
Zl(2fo) = 1.9+0.4i
48
49
50
51
52
53
54
55
56
57
58
48
49
50
51
52
53
54
55
56
57
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
1.7 GHz - Power Tuned
Gain and PAE vs. Output Power
1.7 GHz - Efficiency Tuned
27
26
25
24
23
22
21
20
19
18
17
100
90
80
70
60
50
40
30
20
10
0
28
27
26
25
24
23
22
21
20
19
18
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 1.06-2.58i
Zs(2fo) = 3.35-0.26i
Zl(1fo) = 1.35-1.16i
Zl(2fo) = 3.29+0.08i
Zs(1fo) = 1.06-2.58i
Zs(2fo) = 3.35-0.26i
Zl(1fo) = 1.13-0.65i
Zl(2fo) = 3.29+0.07i
48
49
50
51
52
53
54
55
56
57
58
48
49
50
51
52
53
54
55
56
57
Output Power [dBm]
Output Power [dBm]
Datasheet Rev. A, December 16, 2016 | Subject to change without
notice
www.qorvo.com
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
