QPD1014
15W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor
Typical Performance – Load Pull Drive-up1, 2
Notes:
1. Vd = 50 V, IDQ = 25 mA, Temp = +25 °C.
2. See page 16 for load pull and source pull reference planes.
Gain and PAE vs. Output Power
Gain and PAE vs. Output Power
Gain and PAE vs. Output Power
1.2 GHz - Efficiency Tuned
1.2 GHz - Power Tuned
0.6 GHz - Power Tuned
24
24
100
100
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
Gain
PAE
PAE
Gain
PAE
23
23
90
90
22
22
80
80
21
21
70
70
2200
6600
Zs(1fo) = 43.73-2.64i
Zs(1fo) = 43.73-2.64i
Zs(2fo) = 9.07-14.79i
Zl(1fo) = 69.28+73.62i
Zl(2fo) = 22.05+50.86i
Zs(2fo) = 9.07-14.79i
Zs(1fo) = 57.45-2.25i
19
19
50
50
Zl(1fo) = 53.14+26.33i
Zs(2fo) = 17.62-16.16i
Zl(2fo) = 21.83+51.01i
Zl(1fo) = 62.02+28.1i
18
18
40
40
Zl(2fo) = 98.22+55.99i
17
17
30
30
16
16
20
20
15
15
10
10
14
14
0
0
26
26
28
28
30
30
32
32
34
34
36
36
38
38
40
40
42
42
44
44
30
32
34
36
38
40
42
Output Power [dBm]
Output Power [dBm]
Output Power [dBm]
Rev. A
© 2016 Qorvo
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
