QPD1014
15W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor
Typical Performance – Load Pull Drive-up1, 2
Notes:
1. Vd = 50 V, IDQ = 25 mA, Temp = +25 °C.
2. See page 16 for load pull and source pull reference planes.
Gain and PAE vs. Output Power
0.6 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
0.6 GHz - Power Tuned
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 57.45-2.25i
Zs(2fo) = 17.62-16.16i
Zl(1fo) = 90.02+103.27i
Zl(2fo) = 102.64+54.34i
Zs(1fo) = 57.45-2.25i
Zs(2fo) = 17.62-16.16i
Zl(1fo) = 62.02+28.1i
Zl(2fo) = 98.22+55.99i
28
30
32
34
36
38
40
26
28
30
32
34
36
38
40
42
44
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
0.8 GHz - Power Tuned
Gain and PAE vs. Output Power
0.8 GHz - Efficiency Tuned
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 45.4-8.33i
Zs(1fo) = 45.4-8.33i
Zs(2fo) = 49.03-64.33i
Zl(1fo) = 45.54+31.1i
Zl(2fo) = 153.15-72.46i
Zs(2fo) = 49.03-64.33i
Zl(1fo) = 51.03+81.33i
Zl(2fo) = 150.16-70.28i
26
28
30
32
34
36
38
40
42
44
28
30
32
34
36
38
40
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
1 GHz - Power Tuned
Gain and PAE vs. Output Power
1 GHz - Efficiency Tuned
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 44.56-11.21i
Zs(1fo) = 44.56-11.21i
Zs(2fo) = 36.73-18.96i
Zl(1fo) = 53.16+26.24i
Zl(2fo) = 98.21+91.19i
Zs(2fo) = 36.73-18.96i
Zl(1fo) = 51.79+65.48i
Zl(2fo) = 97.05+90.45i
26
28
30
32
34
36
38
40
42
44
30
32
34
36
38
40
42
Output Power [dBm]
Output Power [dBm]
Rev. A
© 2016 Qorvo
Disclaimer: Subject to change without notice
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