QPB1500
Ku-Band 25 W GaN Power Amplifier
Applications Information and Pin Layout
C11
10 uF
C5
10 uF
R7
5.1 Ohms
C9
0.01 uF
C3
0.01 uF
R3
5.1 Ohms
1
10
9
2
Vg
Vd
RF IN 3
8 RF OUT
7
6
4
5
R8
5.1 Ohms
R4
C4
C10
0.01 uF
5.1 Ohms
0.01 uF
C6
C12
10 uF
10 uF
Bias Up Procedure
1. Set ID limit to 3.5 A, IG limit to 65ꢀmA
Bias Down Procedure
1. Turn off RF supply
2. Apply −5ꢀV to VG
2. Reduce VG to −5ꢀV; ensure IDQ is approx. 0ꢀmA
3. Set VD to 0 V
3. Apply 28ꢀV to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 450ꢀmA (VG ~ −2.5ꢀV Typ.).
5. Turn on RF supply
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pad No.
Symbol
Description
Gate Voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
1,5
VG
3
RFIN
Input; matched to 50ꢀꢁ; DC blocked
2,4,7,9
GND
Must be grounded on the PCB.
Drain voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
6,10
8
VD
RFOUT
Output; matched to 50ꢀꢁ; DC blocked
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Data Sheet Rev. A, June 26, 2017
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
