QPA2735
13.75 –ꢀ18ꢀGHz GaAs Low Noise Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value Units
Thermal Resistance (θJC) (1)
65.0
108.9
6.8E07
°C/W
Tbase = 85°C, VD = 3.5 V, IDQ = 105 mA
Quiescent/Small Signal operation
PDISS = 0.3675 W
Channel Temperature (TCH)
Median Lifetime (TM)
°C
Hrs
Notes:
1. Thermal resistance is measured to back of the package.
Median Lifetime
Test Conditions: VD = 4 V
Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET17
25
50
75
100
125
150
175
200
Channel Temperature, TCH (°C)
Data Sheet Rev. A, June 12 10, 2017 | Subject to change without notice
- 12 of 14 -
www.qorvo.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
