GA1085
Absolute Maximum Ratings1
Storage temperature
Ambient temperature with power applied 2
–65 °C to +150 °C
–55 °C to +100 °C
Supply voltage to ground potential
DC input voltage
–0.5 V to +7.0 V
–0.5 V to (VDD + 0.5) V
–30 mA to +5 mA
θJA = 45 °C/W
DC input current
Package thermal resistance (MQuad)
Die junction temperature
TJ = 150 °C
DC Characteristics (VDD = +5 V + 5%, TA = 0 °C to +70 °C)
Symbol Description
Test Conditions
Min3
Typ
Max3
Unit
VOHT
VOHC
VOL
Output HIGH voltage
VDD = Min IOH = –30 mA
VIN = VIH or VIL
2.4
3.4
V
Output HIGH voltage
Output LOW voltage
Input HIGH level
VDD = Min IOH = –1 mA
VIN = VIH or VIL
3.2
2.0
4.1
V
V
V
V
VDD = Min IOL = 30 mA
VIN = VIH or VIL
0.27
0.5
0.8
4
VIH
Guaranteed input logical
HIGH voltage for all Inputs
Guaranteed input logical
LOW voltage for all inputs
VDD = Max VIN = 0.40 V
VDD = Max VIN = 2.7 V
VDD = Max VIN = 5.5 V
4
VIL
Input LOW level
IIL
IIH
II
Input LOW current
Input HIGH current
Input HIGH current
–156
0
–400
25
µA
µA
µA
mA
V
2
1000
160
5
IDDS
VI
Power supply current VDD = Max
119
–0.70
Input clamp voltage
VDD = Min IIN = –18 mA
–1.2
Capacitance
Symbol
Description
Test Conditions
Min
Typ
Max
Unit
6
CIN
Input capacitance
VIN = 2.0 V at f = 1 MHz
6
pF
Notes: 1. Exceeding these parameters may damage the device.
2. Maximum ambient temperature with device not switching and unloaded.
3. Typical limits are at VDD = 5.0 V and TA = 25 °C.
4. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
5. This parameter is measured with device not switching and unloaded.
6. These parameters are not 100% tested, but are periodically sampled.
4
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
