AGR21180EF
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
45
40
35
30
25
20
15
10
5
0
-10
-20
-30
-40
-50
-60
-70
IM3
ACPR
GPS
0
1
10
POUT (W, average)
100
Test Conditions:
28 VDS, IDQ = 1600 mA.
Two W-CDMA carriers, F1 = 2135 MHz and F2 = 2145 MHz each carrier has 8.98 dB P/A ratio @ 0.01% CCDF, 3.84 MHz channel BW (CBW).
Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power (2 W-CDMA carrier data)
30
25
20
15
10
5
0
-7
-14
-21
-28
-35
-42
IRL
GPS
IM3
ACPR
2220 2250
0
2040
2070
2100
2130
2160
2190
FTEST (MHz)
Test Conditions:
28 VDS, IDQ = 1600 mA, POUT = 38 W (average).
Two W-CDMA carriers, each carrier has 8.98 dB P/A @ 0.01% probability (CCDF), F1 = FTEST - 5 MHz and F2 = FTEST + 5 MHz , 3.84 MHz
CBW.
Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency (2 W-CDMA signal data)
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
