AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
20.00
18.00
16.00
14.00
GAIN (dB)Z
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2100
2110
2120
2130
2140
2150
2160
IRL
IM3
ACPR
2170
GAIN
50.0
40.0
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
2180
IM3 (dBc), ACPR (dBc)Z
30.0
(%), IRL (dB),
FREQUENCY (MHz)Z
Test Conditions:
V
DD
28 Vdc, P
OUT
= 19 W, I
DQ
= 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 8. Broadband Performance
+5
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
CENTER 2.140 GHz
SPAN 50 MHz
Test Conditions:
V
DD
28 Vdc, P
OUT
= 19 W, I
DQ
= 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
F1
F2
IM3
IM3
ACPR
ACPR
Figure 9. Spectral Plot
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
