AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-10
-20
-30
-40
-50
-60
-70
-80
-90
Vdd = 28V Idq = 1600mA
Center Frequency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
3rd Order
5th Order
7th Order
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus Output Power
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
P3dB = 53.88 dBm (244.34W)
P1dB = 53 dBm (199.77W)
Vdd = 28 Vdc, Idq = 1600 mA
Pulsed CW 4 msec (on), 40 msec (off)
Center Frequency = 1960 MHz
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus Input Power
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
