AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics
(continued)
Table 4. RF Characteristics
Parameter
Dynamic Characteristics
Symbol
Min
Typ
4.0
Max Unit
—
pF
—
C
RSS
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(Part is internally matched both on input and output.)
Functional Tests
(in
Agere Systems Supplied Test Fixture)
(in
Supplied Test Fixture)
Common-source Amplifier Power Gain
G
PS
—
(V
DD
= 28 Vdc, P
OUT
= 38 W average, two carrier N-CDMA,
I
DQ
= 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
η
—
Drain Efficiency
(V
DD
= 28 Vdc, P
OUT
= 38 W average, two carrier N-CDMA,
I
DQ
= 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
IM3
—
Third-order Intermodulation Distortion*
(V
DD
= 28 Vdc, P
OUT
= 38 W average, two carrier N-CDMA,
I
DQ
= 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth
centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier chan-
nel power)
ACPR
—
Adjacent Channel Power Ratio*
(V
DD
= 28 Vdc, P
OUT
= 38 W average, two carrier N-CDMA,
I
DQ
= 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth cen-
tered at f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel
power)
Input Return Loss
IRL
—
(V
DD
= 28 Vdc, P
OUT
= 38 W average, two carrier N-CDMA,
I
DQ
= 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
Ruggedness
(V
DD
= 28 V, P
OUT
= 180 W continuous wave (CW), I
DQ
= 1600 mA,
f = 1930 MHz, VSWR = 10:1 [all phase angles])
Ψ
14.5
—
dB
26
—
%
–33
—
dBc
–48.5
—
dBc
–12
—
dB
No degradation in output
power.
* N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. V
DD
= 28 Vdc, I
DQ
= 2 x 800 mA,
and P
OUT
= 38 W average.
.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
