AG R190 90E
90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
60
55
50
45
40
35
30
25
20
15
10
5
0
-10
IM3
-20
?
(%)
?
ACP
G
PS
-30
-40
-50
-60
-70
100
1
10
P
OUT
(W)
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. P
OUT
17
16
G
PS
(dB)Z
15
14
13
12
I
DQ
= 1100 mA
I
DQ
= 850 mA
I
DQ
= 650 mA
I
DQ
= 450 mA
I
DQ
= 1300 mA
1
10
P
OUT
(W)
IM3 (dBc), ACPR (dBc)
100
Test Conditions:
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
G
PS
(dB),
Figure 7. 2-Carrier N-CDMA Power Gain vs. P
OUT
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
