AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.5
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C
Derate Above 25 °C
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Value
65
–0.5, 15
115
0.67
200
Unit
Vdc
Vdc
W
W/°C
°C
—
TJ
Storage Temperature Range
TSTG
–65, 150
°C
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Symbol
Min
Typ Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID = 32800µµAA)
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
V(BR)DSS
IGSS
65
—
—
—
—
—
—
Vdc
µAdc
µAdc
1.3
75
4
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
Gate Threshold Voltage (VDS = 10 V, ID = 130 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA)
Drain-source On-voltage (VGS = 10 V, ID = 0.4 A)
GFS
—
—
—
—
3.0
—
—
4.8
—
S
VGS(TH)
VGS(Q)
VDS(ON)
Vdc
Vdc
Vdc
3.7
0.3
—
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
