AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
50.00
G
PS
, POWER GAIN (dB),Z
DRAIN EFFICIENCY (%)
Z
45.00
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
0.00
1.00
600 kHz
10.00
P
OUT
, OUTPUT POWER (WATTS)Z
IRL
EFFICIENCY
400 kHz
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
G
PS
-70.0
-80.0
-90.0
100.00
IRL, INPUT RETURN LOSS (dB),
Z
SPECTRAL REGROWTH (dBc)Z
V
DD
= 26 V, I
DQ
= 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage
G
PS
, POWER GAIN (dB),Z
DRAIN EFFICIENCY (%)
Z
45.00
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
0.00
0.00
EVM
5.00
10.00
15.00
20.00
25.00
30.00
35.00
G
PS
EFFICIENCY
9
8
7
6
5
4
3
2
1
0
40.00
P
OUT
, OUTPUT POWER (WATTS)Z
V
DD
= 26 V, I
DQ
= 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power
EVM, ERROR VECTOR MAGNITUDEZ
RMS (%)Z
50.00
10
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
