AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
EFFICIENCY
IRL
IM3
G
PS
1780
1800
1820
1840
1860
1880
IRL, INPUT RETURN LOSS
Z
(dB), IM3,Z
INTERMODULATION
Z
DISTORTION (dBc)
Z
100.00
G
PS
, POWER GAIN (dB),Z
DRAIN EFFICIENCY(%)
Z
50
40
30
20
10
0
1760
0
-10
-20
-30
-40
-50
1900
f, FREQUENCY (MHz)Z
V
DD
= 26 V, I
DQ
= 500 mA, P
OUT
= 60 W (PEP), TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency
IM3, INTERMODULATION DISTORTION (dBc)
Z
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
1.00
I
DQ
= 500 mA
I
DQ
= 900 mA
I
DQ
= 300 mA
I
DQ
= 700 mA
10.00
P
OUT
, OUTPUT POWER (WATTS) PEPZ
V
DD
= 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 8. Intermodulation Distortion Versus Output Power