Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
Typical Performance at Vs = +75V
THD+N vs Output Power
10
5
2
1
0.5
20Hz - 22kHz BW
f = 1kHz
BBM = 25nS
V
S
= +/-75V
Av = 14
ST STW38NB20 MOSFET
Efficiency versus Output Power
100
90
80
70
60
50
40
30
20
10
0
0
R
L
= 8Ω
Efficiency (%)
THD+N (%)
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
1
2
5
10
20
50
100
200
500
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
22Hz - 22kHz BW
f = 1kHz
BBM = 25nS
V
S
= +/-75V
Av = 14
ST STW38NB20 MOSFET
100
200
300
400
500
600
700
Output Power (W)
Output Power (W)
Intermodulation Performance
R
L
= 8Ω
10Hz - 80kHz BW
19kHz, 20kHz, 1:1
BBM = 25nS
Pout = 100W/Channel
V
S
= +/-75V
0dBr = 28Vrms
Av = 14
ST STW38NB20 MOSFET
Frequency Response
+2
+1.5
20Hz - 22kHz BW
BBM = 25nS
Pout = 10W
Vs = +/-75V
R
L
= 8Ω
Av = 14
ST STW38NB20 MOSFET
+10
+0
-10
-20
Output Amplitude (dBr)
+1
+0.5
+0
-0.5
-1
-1.5
-2
10
FFT (dBr)
200
500
1k
2k
5k
10k
20k
-30
-40
-50
-60
-70
-80
-90
-100
20
50
100
60
100
200
500
1k
2k
5k
10k
20k 30k
Frequency (Hz)
Frequency (Hz)
+0
-10
-20
-30
Channel Separation versus Frequency
R
L
= 8Ω
20Hz - 22kHz BW
BBM = 25nS
Pout = 100W/Channel
V
S
= +/-75V
Av = 14
ST STW38NB20 MOSFET
A-Weighted Noise FFT
+0
-10
-20
-30
-40
20Hz - 22kHz BW
BBM = 145nS
Pout = 0W
V
S
= +/-75V
R
L
= 8Ω
Av = 14
ST STW38NB20 MOSFET
Channel Separation (dBr)
-40
-50
-60
-70
-80
-90
Noise FFT (dBV)
20
50
100
200
500
1k
2k
5k
10k
20k
-50
-60
-70
-80
-90
-100
-110
-120
-130
-100
-140
20
50
100
200
500
1k
2k
5k
10k
20k
Frequency (Hz)
Frequency (Hz)
6
TA104A – Rev. 3.1/06.00
TRIPATH [ TRIPATH TECHNOLOGY INC. ]
