Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
Performance Characteristics – Single Ended, Vs = +90V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. T
A
= 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYMBOL
P
OUT
PARAMETER
Output Pow er
(Continuous Average/Channel)
CONDITIONS
R
L
= 8
Ω
R
L
= 4
Ω
THD+N = 1%,
R
L
= 8
Ω
R
L
= 4
Ω
P
OUT
= 300W/Channel, R
L
= 8
Ω
19kHz, 20kHz, 1:1 (IHF), R
L
= 8
Ω
P
OUT
= 100W/Channel
A Weighted, P
OUT
= 350W/Ch, R
L
= 8
Ω
0dBr = 100W, R
L
= 8
Ω
Input Referenced, 30kHz Bandw idth
A Weighted, no signal, input shorted, DC
offset nulled to zero
THD+N = 0.1%,
MIN.
TYP.
350
500
450
750
0.02
0.02
100.5
85
65
500
MAX.
UNITS
W
W
W
W
%
%
dB
dB
dB
µ
V
THD + N
IHF-IM
SNR
CS
PSRR
e
NOUT
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
Signal-to-Noise Ratio
Channel Separation
Pow er Supply Rejection Ratio
Output Noise Voltage
Performance Characteristics – Single Ended, Vs = +75V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. T
A
= 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYMBOL
P
OUT
PARAMETER
Output Pow er
(Continuous Average/Channel)
CONDITIONS
R
L
= 8
Ω
R
L
= 4
Ω
THD+N = 1%,
R
L
= 8
Ω
R
L
= 4
Ω
P
OUT
= 300W/Channel, R
L
= 4
Ω
19kHz, 20kHz, 1:1 (IHF), R
L
= 8
Ω
P
OUT
= 100W/Channel
A Weighted, P
OUT
= 200W/Ch, R
L
= 8
Ω
0dBr = 100W, R
L
= 8
Ω
, f = 1kHz
Input Referenced, 30kHz Bandw idth
P
OUT
= 400W/Channel, R
L
= 8
Ω
A Weighted, no signal, input shorted, DC
offset nulled to zero
THD+N = 0.1%,
MIN.
TYP.
200
425
300
500
0.02
0.02
98
85
65
90
500
MAX.
UNITS
W
W
W
W
%
%
dB
dB
dB
%
µ
V
THD + N
IHF-IM
SNR
CS
PSRR
η
e
NOUT
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
Signal-to-Noise Ratio
Channel Separation
Pow er Supply Rejection Ratio
Pow er Efficiency
Output Noise Voltage
Minimum and maximum limits are guaranteed but may not be 100% tested.
Notes:
1)
2)
V5 = +5V, VN12 = +12V referenced to V
SNEG
Test/Application Circuit Values:
D = MUR120T3 diodes, R
IN
= 22.1KΩ
R
D
= 33Ω, R
S
= 0.025Ω,R
G
= 5.6Ω
R
OCR1
= R
OCR2
= 0Ω, L
F
= 18uH (Amidon core T200-2)
C
F
= 0.22uF, C
D
= 0.1uF, C
IN
= 1uF, C
BY
= 0.1uF
Power Output MOSFETs, M = ST STW38NB20
BBMO=BBM1=1
3
TA104A – Rev. 3.1/06.00
TRIPATH [ TRIPATH TECHNOLOGY INC. ]
