TMC603 DATA SHEET (V. 1.06 / 26. Mar. 2009)
32
NMOS high side driver
DC-Characteristics
VVCC = 5.0 V, VVLS = 12V, VCPD = 10.5V
Symbol Conditions Min
note 1)
Parameter
Typ
Max
Unit
Gate drive current HSx
high side switch ON
IHSON
IHSOFF
IHSON
IHSOFF
IHSON
IHSOFF
VGOD
VHSX = 5V
RSLP = 68k
112
-120
75
135
180
mA
mA
mA
mA
mA
mA
V
Gate drive current HSx
high side switch OFF
VHSX = VM+5V
RSLP = 68k
-150
90
-180
120
Gate drive current HSx
high side switch ON
VHSX = 5V
RSLP = 100k
Gate drive current HSx
high side switch OFF
VHSX = VM+5V
RSLP = 100k
-80
-100
50
-120
Gate drive current HSx
high side switch ON
VHSX = 5V
RSLP = 220k
Gate drive current HSx
high side switch OFF
VHSX = VM+5V
RSLP = 220k
-50
0
Gate Off detector threshold high
side VHSX-VBMX, BM level high
VHSX falling
VBMX > VGOBM
Gate Off detector threshold high
side VBMX, BM level low
VGOBM
VBMX falling
3.5
V
QGD protection current after
detection of gate off
IHSOFFQGD VBMX = 24V
VHSX = VBMX+2V
RSLP = 100k
300
mA
Delay HS driver switch on
BHx to HSx at 50%
tHSON
75
60
150
120
300
240
ns
ns
VM = 24V
CHSX = 100pF
Delay HS driver switch off
BHx to HSx at 50%
tHSOFF
RSLP = 100k
VM = 24V
CHSX = 100pF
Break-before-make block
Timing-Characteristics
note 1)
VVM = 48 V, RSLP = 100K
Parameter
Symbol Conditions
Min
Typ
Max
Unit
Break-before-make delay LSx off
to HSx on
tBBMLH
Measured at 1V
gate-source voltage
160
ns
Break-before-make delay HSx
off to LSx on
tBBMHL
Measured at 1V
gate-source voltage
290
ns
1) See timing diagram in figure 6: bridge driver timing
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