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TC1202P0912 参数 Datasheet PDF下载

TC1202P0912图片预览
型号: TC1202P0912
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Small Signal Field-Effect Transistor]
分类和应用:
文件页数/大小: 4 页 / 169 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
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TC1202
REV5_20070502
SCHEMATI
Lg
Rg
Cgs
Ri
T
Cgd
Gm
Cds
Rds
Rd
Ld
PARAMETERS
Lg
Rg
Cgs
Ri
Cgd
Gm
Rs
0.045
nH
0.79 Ohm
0.361 pF
1.47 Ohm
0.031 pF
94.9 mS
2.13 psec
Rs
Ls
Cds
Rds
Rd
Ld
1.12 Ohm
0.0005 nH
0.084 pF
193.0 Ohm
0.920 Ohm
0.024 nH
T
Ls
CHIP HANDLING
DIE ATTACHMENT:
Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C
±
5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING:
The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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