TC1202
REV5_20070502
Super Low Noise GaAs FETs
FEATURES
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Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 12 dB Typical at 12 GHz
Lg = 0.25
µm,
Wg = 300
µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise
application including a wide range of commercial and military applications. All devices are 100% DC tested to
assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire
bonding.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
I
DSS
g
m
V
P
BV
DGO
R
th
Conditions
Noise Figure at V
DS
= 4 V, I
DS
= 25 mA
,
f
= 12GHz
= 12GHz
11
MIN
TYP
0.5
12
90
100
-1.0
5
8
120
MAX
0.7
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
Associated Gain at V
DS
= 4 V, I
DS
= 25 mA,
f
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 0.6 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Drain-Gate Breakdown Voltage at I
DGO
=0.15 mA
Thermal Resistance
Note:
* For the tight control of the pinch-off voltage . TC1202’s are divided into 3 groups:
(1)
TC1202P0710
: Vp = -0.7V to -1.0V (2)
TC1202P0811
: Vp = -0.8V to -1.1V (3)
TC1202P0912
: Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
TRANSCOM [ TRANSCOM, INC. ]
