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TC1101 参数 Datasheet PDF下载

TC1101图片预览
型号: TC1101
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声和中等功率GaAs场效应管 [Low Noise and Medium Power GaAs FETs]
分类和应用:
文件页数/大小: 5 页 / 250 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
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TC1101
REV6_20070502
SCHEMATI
Lg
Rg
Cgs
Ri
T
Cgd
Gm
Cds
Rds
Rd
Ld
PARAMETERS
Lg
Rg
Cgs
Ri
Cgd
Rs
0.047 nH
1.460 Ohm
0.207 pF
3.680 Ohm
0.027 pF
54.80 mS
3.340 psec
Rs
Ls
Cds
Rds
Rd
Ld
1.290 Ohm
0.001 nH
0.068 pF
321.5 Ohm
1.525 Ohm
0.038 nH
Gm
T
Ls
SMALL SIGNAL MODEL, V
DS
= 6 V, I
DS
= 25 mA
SCHEMATI
Lg
Rg
Cgs
Ri
T
Cgd
Gm
Cds
Rds
Rd
Ld
PARAMETERS
Lg
Rg
Cgs
Ri
Cgd
Rs
0.047 nH
1.460 Ohm
0.254 pF
5.910 Ohm
0.019 pF
66.00 mS
3.640 psec
Rs
Ls
Cds
Rds
Rd
Ld
1.250 Ohm
0.001 nH
0.067 pF
377.8 Ohm
1.525 Ohm
0.038 nH
Gm
T
Ls
CHIP HANDLING
DIE ATTACHMENT:
Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C
±
5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING:
The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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