TC1101
REV6_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 12 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P
-1
= 18.5 dBm at 12 GHz
Breakdown Voltage: BV
DGO
≥
9 V
Lg = 0.25
µm,
Wg = 160
µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DSS
g
m
V
P
R
th
Conditions
Noise Figure at V
DS
= 2 V, I
DS
= 10 mA,
f
= 12GHz
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA,
f
= 12GHz
Output Power at 1dB Gain Compression point,
f
= 12GHz V
DS
= 6 V, I
DS
= 25 mA
Linear Power Gain,
f
= 12GHz V
DS
= 6 V, I
DS
= 25 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 0.32 mA
9
Thermal Resistance
10
17.5
14
MIN
TYP
0.5
12
18.5
15
48
55
-1.0*
12
225
MAX
0.7
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=0.08 mA
Note:
* For the tight control of the pinch-off voltage . TC1101’s are divided into 3 groups:
(1)
TC1101P0710
: Vp = -0.7V to -1.0V (2)
TC1101P0811
: Vp = -0.8V to -1.1V (3)
TC1101P0912
: Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C) TYPICAL NOISE PARAMETERS (T
A
=25
°
C)
V
DS
= 2 V, I
DS
= 10 mA
Symbol
V
DS
V
GS
I
DS
I
GS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I
DSS
160
µA
18 dBm
250 mW
175
°C
- 65
°C
to +175
°C
Frequency
(GHz)
2
4
6
8
10
12
14
16
18
NF
opt
(dB)
0.38
0.40
0.42
0.45
0.50
0.55
0.64
0.78
0.95
G
A
(dB)
19.8
17.5
15.6
13.9
13.1
12.4
11.7
11.1
10.6
Γ
opt
MAG
ANG
0.99
4
0.90
9
0.82
18
0.76
29
0.69
43
0.63
55
0.56
65
0.45
76
0.34
90
Rn/50
0.48
0.40
0.37
0.34
0.32
0.30
0.28
0.26
0.24
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/5
TRANSCOM [ TRANSCOM, INC. ]
