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TLP371 参数 Datasheet PDF下载

TLP371图片预览
型号: TLP371
PDF下载: 下载PDF文件 查看货源
内容描述: 东芝光电耦合的GaAs红外发光二极管和光电晶体管 [TOSHIBA Photocoupler GaAs Ired & Photo−Transistor]
分类和应用: 晶体光电二极管晶体管光电晶体管
文件页数/大小: 8 页 / 191 K
品牌: TOSHIBA [ TOSHIBA ]
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TLP371,TLP372  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
I = 10 mA  
Min  
Typ.  
Max  
Unit  
V
1.0  
1.15  
1.3  
10  
V
F
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
µA  
pF  
R
C
T
V = 0, f = 1 MHz  
30  
Collector-emitter  
V
V
V
V
I
I
I
I
= 0.1 mA  
= 0.1 mA  
= 0.1 mA  
= 0.1 mA  
300  
0.3  
V
V
V
(BR) CEO  
(BR) ECO  
(BR) CBO  
(BR) EBO  
C
E
C
E
breakdown voltage  
Emitter-collector  
breakdown voltage  
Collector-base  
300  
breakdown voltage (TLP371)  
Emitter-base  
7
10  
200  
20  
V
breakdown voltage (TLP371)  
V
V
= 200 V  
= 200 V  
nA  
µA  
CE  
CE  
Collector dark current  
I
CEO  
Ta = 85 °C  
V
= 200 V  
CE  
Collector dark current (TLP371)  
I
I
Ta = 85 °C,  
0.5  
10  
µA  
CER  
R
= 10 MΩ  
= 200 V  
= 5 V,  
BE  
CE  
CE  
Collector dark current (TLP371)  
DC forward current gain (TLP371)  
Capacitance (collecter to emitter)  
V
V
0.1  
7000  
10  
nA  
CBO  
h
FE  
I
= 10 mA  
C
C
V = 0, f = 1 MHz  
pF  
CE  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Current transfer ratio  
Symbol  
/ I  
Test Condition  
MIn  
Typ.  
Max  
Unit  
I
I
I
I
I
I
= 1 mA, V = 1 V  
1000  
500  
4000  
%
%
C
F
F
F
F
C
C
CE  
Saturated CTR  
I
/ I  
= 10 mA, V = 1 V  
CE  
C
F (sat)  
PB  
Base photo-current (TLP371)  
I
= 1 mA, V = 1 V  
6
µA  
CB  
= 10 mA, I = 1 mA  
1.0  
1.2  
F
Collector-emitter  
V
V
CE (sat)  
saturation voltage  
= 100 mA, I = 10 mA  
F
0.3  
3
2002-09-25