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TLP371 参数 Datasheet PDF下载

TLP371图片预览
型号: TLP371
PDF下载: 下载PDF文件 查看货源
内容描述: 东芝光电耦合的GaAs红外发光二极管和光电晶体管 [TOSHIBA Photocoupler GaAs Ired & Photo−Transistor]
分类和应用: 晶体光电二极管晶体管光电晶体管
文件页数/大小: 8 页 / 191 K
品牌: TOSHIBA [ TOSHIBA ]
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TLP371,TLP372  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
60  
-0.7  
1
mA  
mA / °C  
A
F
Forward current derating (Ta 39°C)  
Peak forward current (100µs pulse, 100pps)  
Reverse voltage  
I / °C  
F
I
FP  
V
5
V
R
Junction temperature  
T
125  
°C  
j
Collector-emitter voltage  
V
300  
V
CEO  
CBO  
ECO  
EBO  
Collector-base voltage (TLP371)  
Emitter-collector voltage  
V
V
V
300  
V
0.3  
V
Emitter-base voltage (TLP371)  
Collector current  
7
V
I
150  
mA  
mW  
mW / °C  
°C  
C
Power dissipation  
P
300  
C
Power dissipation derating (Ta 25°C)  
Junction temperature  
P / °C  
-3.0  
125  
C
T
j
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10 s)  
Total package power dissipation  
Total package power dissipation derating (Ta 25°C)  
T
-55~125  
-55~100  
260  
°C  
stg  
opr  
T
°C  
T
°C  
sold  
P
350  
mW  
mW / °C  
Vrms  
T
P / °C  
-3.5  
5000  
T
Isolation voltage (AC, 1min., R.H. 60%)  
(Note 1)  
BV  
S
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted  
together.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min  
Typ.  
Max  
Unit  
Supply voltage  
Forward current  
Collector current  
V
16  
200  
25  
V
CC  
I
mA  
mA  
°C  
F
I
120  
85  
C
Operating temperature  
T
-25  
opr  
2
2002-09-25