SH0R3D42
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Turn−On Time
Turn−Off Time
Critical Rate of Rise of Off−State Voltage
Holding Current
Thermal Resistance
SYMBOL
I
DRM
V
TM
V
GT
I
GT
V
GD
t
gt
t
q
dv / dt
I
H
R
th (j−c)
TEST CONDITION
T
j
= 125°C, V
DRM
= Rated
R
GK
= 1kΩ
I
TM
= 2A
V
D
= 6V, R
L
= 100Ω
V
D
= Rated, Tc = 110°C
V
D
= Rated, I
TM
= 4A
I
G
= 10mA
V
D
= 20V, I
P
= 1A, R
GK
= 1kΩ
V
D
= Rated, R
GK
= 1kΩ
Tc = 110°C, Exponential Rise
R
L
= 100Ω, R
GK
= 1kΩ
Junction to Ambient
MIN
―
―
―
―
0.3
―
―
15
―
―
MAX
100
1.8
0.9
1.0
―
2.0
6.0
―
15
250
UNIT
µA
V
V
mA
V
µs
µs
V / µs
mA
°C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SH0R3D42
MARK
H0R3D
*2
Example
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
