SH0R3D42
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
SH0R3D42
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 200V
l
Average On−State Current
l
Plastic Mold Type.
: I
T (AV)
= 300mA
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage
(R
GK
= 1kΩ)
Non−Repetitive Peak Off−State
Voltage (R
GK
= 1kΩ)
Average On−State Current
(Half Sine Waveform Ta = 30°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
SYMBOL
V
DRM
V
DSM
I
T (AV)
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
RATING
200
250
300
450
7 (50Hz)
0.3
0.1
0.01
3.5
−7
125
−40~125
−40~125
UNIT
V
V
mA
mA
A
A s
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1A
Note:
Should be used with gate resistance as follows.
1
2001-07-10
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
