MG150J7KS60
2. Brake stage
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Switching time
Turn-off time
Fall time
Reverse current
Forward voltage
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
d (on)
t
off
t
f
I
R
V
F
V
R
=
600 V
I
F
=
75 A
Test Condition
V
GE
= ±20
V, V
CE
=
0
V
CE
=
600 V, V
GE
=
0
V
CE
=
5 V, I
C
=
75 mA
V
GE
=
15 V,
I
C
=
75 A
T
j
=
25°C
T
j
=
125°C
Min
¾
¾
5.0
¾
¾
¾
¾
(Note 1)
¾
¾
¾
¾
Typ.
¾
¾
6.5
1.6
¾
12000
¾
¾
¾
¾
2.1
Max
±500
1.0
8.0
2.2
V
2.2
¾
1.00
1.20
0.50
1.0
2.6
mA
V
ms
pF
Unit
nA
mA
V
V
CE
=
10 V, V
GE
=
0, f
=
1MHz
V
CC
=
300 V, I
C
=
75 A
V
GE
= ±15
V, R
G
=
24
W
Note 1: Switching time test circuit & timing chart
3. Module
(Tc
=
25°C)
Characteristics
Zero-power resistance
B value
Symbol
R25
B25/85
Test Condition
ITM
=
0.2 mA
Tc
=
25°C/Tc
=
85°C
Inverter IGBT stage
Inverter FRD stage
Junction to case thermal resistance
R
th (j-c)
Brake IGBT stage
Brake FRD stage
Case to fin thermal resistance
R
th (c-f)
¾
Min
¾
¾
¾
¾
¾
¾
¾
Typ.
100
4390
¾
¾
¾
¾
0.05
Max
¾
¾
0.167
0.313
°C/W
0.333
1.000
¾
°C/W
Unit
kW
K
Switching Time Test Circuit & Timing Chart
V
GE
10%
90%
R
G
-V
GE
V
CC
R
G
I
rr
I
C
t
rr
90%
10%
t
d (on)
t
d (off)
t
f
10%
4
2001-10-03
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
