MG150J7KS60
Maximum Ratings
(Ta
=
25°C)
Stage
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
Inverter
Forward current
1 ms
Collector power dissipation (Tc
=
25°C)
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1 ms
Brake
Collector power dissipation (Tc
=
25°C)
Reverse voltage
DC
Forward current
1 ms
Junction temperature
Storage temperature range
Module
Isolation voltage
Terminal
Screw torque
Mounting
1 ms
DC
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
R
I
F
I
FM
T
j
T
stg
V
isol
¾
¾
Rating
600
±20
150
A
300
150
A
300
750
600
±20
75
A
150
375
600
75
A
150
150
-40~125
2500 (AC 1 min)
2 (M4)
N�½�m
3 (M5)
°C
°C
V
W
V
W
V
V
Unit
V
V
Electrical Characteristics
(T
j
=
25°C)
1. Inverter stage
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Switching time
Turn-off time
Fall time
Reverse recovery time
Forward voltage
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
d (on)
t
off
t
f
t
rr
V
F
I
F
=
150 A
V
CC
=
300 V, I
C
=
150 A
V
GE
= ±15
V, R
G
=
15
W
(Note 1)
Test Condition
V
GE
= ±20
V, V
CE
=
0
V
CE
=
600 V, V
GE
=
0
V
CE
=
5 V, I
C
=
150 mA
V
GE
=
15 V,
I
C
=
150 A
T
j
=
25°C
T
j
=
125°C
Min
¾
¾
5.0
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
6.5
1.6
¾
25000
¾
¾
¾
¾
2.0
Max
±500
1.0
8.0
2.2
V
2.2
¾
1.00
1.20
0.50
0.30
2.2
V
ms
pF
Unit
nA
mA
V
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Note 1: Switching time test circuit & timing chart
3
2001-10-03
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
