XP152A11E5MR
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *1
Forward Transfer Admittance *1
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds= -30V, Vgs= 0V
Vgs=
±20V,
Vds= 0V
Id= -1mA, Vds= -10V
Id= -0.4A, Vgs= -10V
Id= -0.4A, Vgs= -4.5V
Id= -0.4A, Vds= -10V
If= -0.7A, Vgs= 0V
MIN.
-
-
-1.0
-
-
-
-
TYP.
-
-
-
0.20
0.35
1
-0.8
MAX.
-10
±10
-3.0
0.25
0.45
-
-1.1
T
a = 25℃
UNITS
μA
μA
V
Ω
Ω
S
V
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds= -10V, Vgs=0V
f= 1MHz
CONDITIONS
MIN.
-
-
-
TYP.
160
120
50
MAX.
-
-
-
T
a = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs= -5V, Id= -0.4A
Vdd= -10V
CONDITIONS
MIN.
-
-
-
-
TYP.
10
25
25
40
MAX.
-
-
-
-
T
a = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
250
MAX.
-
UNITS
℃/W
2/5
TOREX [ TOREX SEMICONDUCTOR ]
