欢迎访问ic37.com |
会员登录 免费注册
发布采购

XP152A11E5MR 参数 Datasheet PDF下载

XP152A11E5MR图片预览
型号: XP152A11E5MR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 5 页 / 424 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
 浏览型号XP152A11E5MR的Datasheet PDF文件第2页浏览型号XP152A11E5MR的Datasheet PDF文件第3页浏览型号XP152A11E5MR的Datasheet PDF文件第4页浏览型号XP152A11E5MR的Datasheet PDF文件第5页  
XP152A11E5MR
Power MOSFET
ETR1120_001
■GENERAL
DESCRIPTION
The XP152A11E5MR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on) = 0.25Ω@ Vgs = -10V
: Rds(on) = 0.45Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -4.5V
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current
Drain Current
(DC)
(Pulse)
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±20
-0.7
-2.8
-0.7
0.5
150
-55~150
V
V
A
A
A
W
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
* When implemented on a ceramic PCB
1/5