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Electrical Characteristics
DC characteristics (N-Channel Power MOS FET)
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = 30 , Vgs = 0V
Vgs =
±
20 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 3A , Vgs = 10V
Id = 3A , Vgs = 4.5V
Id = 3A , Vds = 10V
If = 6A , Vgs = 0V
1.0
0.026
0.035
12
0.85
1.1
MIN
TYP
MAX
10
±
1
Ta=25 C
UNITS
O
µA
µA
V
Ω
Ω
S
V
2.5
0.033
0.045
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds = 10V , Vgs = 0V
f = 1 MHz
CONDITIONS
MIN
TYP
620
350
120
MAX
Ta=25 C
UNITS
O
pF
pF
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
Vgs = 5V , Id = 3A
Vdd = 10V
CONDITIONS
MIN
TYP
15
20
30
10
MAX
Ta=25 C
UNITS
O
ns
ns
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
O
C/W
439
TOREX [ TOREX SEMICONDUCTOR ]
