XP135A1145SR
◆
N-Channel/P-Channel Power MOS FET
◆
DMOS Structure
◆
Low On-State Resistance : 0.045
Ω
max (Nch)
0.110
Ω
max (Pch)
◆
Ultra High-Speed Switching
◆
SOP - 8 Package
◆
Two FET Devices Built-in
Power MOS FET
■
●
●
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
■
General Description
The XP135A1145SR is a N-Channel/P-Channel Power MOS FET
with low on-state resistance and ultra high-speed switching
characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■
Features
Low on-state resistance (Nch) :
Rds (on) = 0.033Ω ( Vgs = 10V )
Rds (on) = 0.045Ω ( Vgs = 4.5V )
Low on-state resistance (Pch) :
Rds (on) = 0.065Ω ( Vgs = -10V )
Rds (on) = 0.110Ω ( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage :
4.5V (Nch) : -4.5V (Pch)
High density mounting :
SOP - 8
■
Pin Configuration
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
■
Pin Assignment
PIN NUMBER
1
2
3
4
5 - 6
7 - 8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source (Nch)
Gate (Nch)
Source (Pch)
Gate (Pch)
Drain (Pch)
Drain (Nch)
u
SOP - 8 Top View
■
Equivalent Circuit
■
Absolute Maximum Ratings
Ta=25
O
C
RATINGS
Nch
30
±20
6
20
6
2
150
- 55 to 150
Pch
- 30
±20
-4
- 16
-4
１
２
３
４
８
７
６
５
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
UNITS
V
V
A
A
A
W
O
N-Channel/P - Channel MOS FET
( 2 devices built-in )
C
C
O
( note ) : When implemented on a glass epoxy PCB
437
TOREX [ TOREX SEMICONDUCTOR ]
