XP133A0245SR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
15
5V
2.5V
Pulse Test, Ta=25°C
15
2V
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V
Drain Current:Id (A)
10
4V
Drain Current:Id (A)
3V
10
1.5V
5
Topr＝25℃
5
Vgs＝1V
0
0
1
2
3
0
0
125℃
-55℃
1
2
3
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.15
Pulse Test, Ta=25°C
1
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25°C
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.1
5A
Id＝3A
0.05
Drain-Source On-State Resistance
:Rds (on) (Ω)
Vgs＝1.5V
0.1
2.5V
4.5V
0
0
2
4
6
8
10
0.01
0
5
10
15
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.15
Pulse Test
0.6
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA
11
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
Drain-Source On-State Resistance
:Rds (on) (Ω)
Id＝3A
0.1
Vgs＝1.5V
1A
2.5V
0.05
5A
3A
0.4
0.2
0.0
-0.2
3A,5A
4.5V
0
-60
-30
0
30
60
90
120
150
-0.4
-0.6
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (°C)
Ambient Temp.:Topr (°C)
777
TOREX [ TOREX SEMICONDUCTOR ]
