XP133A0245SR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Ta=25°C
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=3A, Vgs=4.5V
Id=3A, Vgs=2.5V
Id=1A, Vgs=1.5V
Id=3A, Vds=10V
If=5A, Vgs=0V
MIN
TYP
MAX
10
±1
1.2
0.035
0.047
0.078
12
0.85
1.1
0.045
0.06
0.1
UNITS
µA
µA
V
Ω
Ω
Ω
S
V
0.5
Yfs
Vf
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN
TYP
880
460
150
MAX
Ta=25°C
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=5V, Id=3A
Vdd=10V
CONDITIONS
MIN
TYP
10
15
65
10
MAX
Ta=25°C
UNITS
ns
ns
ns
ns
11
Thermal Characteristics
PARAMETER
Thermal Resistance
(channel-ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
˚C/W
776
TOREX [ TOREX SEMICONDUCTOR ]
