XP133A1330SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz, Ta=25℃
SWITCHING TIME vs. DRAIN CURRENT
1000
Vgs=5V, Vdd
≒
10V, PW=10μs, duty≤1%, Ta=25℃
1000
Ciss
Coss
Switching Time:t (ns)
Capacitance:C (pF)
tf
100
td(off)
100
Crss
tr
td(on)
10
0
5
10
15
20
10
0
2
4
6
8
10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
5
Vds=10V, Id=6A, Ta=25℃
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
20
Ta=25℃, Pulse Test
Gate-Source Voltage:Vgs (V)
4
Reverse Drain Current:Idr (A)
4.5V
2.5V
16
1.5V
3
12
2
8
Vgs=0V, -4.5V
1
4
0
0
5
10
15
20
25
30
0
0
0.2
0.4
0.6
0.8
1
1.2
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
11
Standardized Transition Thermal Resistance:γs(t)
10
Rth(ch-a)=62.5℃/W, (Implemented on a glass epoxy PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
770
TOREX [ TOREX SEMICONDUCTOR ]
