XP133A1330SR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
20
Ta=25℃, Pulse Test
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
20
Vds=10V, Pulse Test
5V
4V
2.5V
3V
25℃
16
Drain Current:Id (A)
Drain Current:Id (A)
2V
16
Ta=-55℃
125℃
12
1.5V
12
8
8
4
Vgs=1V
4
0
0
0.5
1
1.5
0
3
0
0.5
1
1.5
2
2.5
2
2.5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.1
Ta=25℃, Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.1
Ta=25℃, Pulse Test
Drain-Source On-State Resistance
:Rds(on) (Ω)
0.08
Drain-Source On-State Resistance
:Rds(on) (Ω)
Vgs=1.5V
0.06
Id=6A
3A
2.5V
4.5V
0.04
0.02
0
0
1
2
3
4
5
0.01
0
4
8
12
16
20
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance:Rds(on) (Ω)
0.1
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
0.6
Vds=10V, Id=1mA
Gate-Source Cut-Off Voltage Variance
:Vgs(off) Variance (V)
11
0.08
0.4
0.2
0
-0.2
-0.4
-0.6
-50
0
50
100
150
0.06
Vgs=1.5V
Id=3A
1A
3A, 6A
0.04
2.5V
3A, 6A
0.02
4.5V
0
-50
0
50
100
150
Ambient Temp. :Topr (℃)
Ambient Temp. :Topr (℃)
769
TOREX [ TOREX SEMICONDUCTOR ]
