XP133A1235SR
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *
Forward Transfer Admittance *
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=1mA, Vds=10V
Id=3A, Vgs=4.5V
Id=3A, Vgs=2.5V
Id=4A, Vds=10V
If=6A, Vgs=0V
MIN.
-
-
0.5
-
-
-
-
TYP.
-
-
-
0.026
0.035
14
0.85
MAX.
10
±1
1.2
0.035
0.048
-
1.1
T
a = 25℃
UNITS
μA
μA
V
Ω
Ω
S
V
* Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds=10V, Vgs=0V
f=1MHz
CONDITIONS
MIN.
-
-
-
TYP.
760
430
200
MAX.
-
-
-
T
a = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=5V, Id=3A
Vdd=10V
CONDITIONS
MIN.
-
-
-
-
TYP.
10
20
55
15
MAX.
-
-
-
-
T
a = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP.
62.5
MAX.
-
UNITS
℃/W
1476
TOREX [ TOREX SEMICONDUCTOR ]
