◆N-Channel
Power MOSFET
◆DMOS
Structure
◆Low
On-State Resistance : 0.035Ω(MAX.)
◆Ultra
High-Speed Switching
◆SOP-8
Package
◆Two
FET Devices Built-in
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■GENERAL
DESCRIPTION
The XP133A1235SR is an N-channel Power MOSFET with low
on-state resistance and ultra high-speed switching
characteristics. Two FET devices are built into the one package
Because high-speed switching is possible, the IC can be
efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting
possible.
■FEATURES
Low On-State Resistance
: Rds(on)=0.035Ω(Vgs= 4.5V)
: Rds(on)=0.048Ω(Vgs = 2.5V)
Ultra High-Speed Switching
Driving Voltage
: 2.5V
High Density Mounting
: SOP-8
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±12
6
20
6
2
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a glass epoxy PCB
XP133A1235SR ETR1112_001.doc
1475
TOREX [ TOREX SEMICONDUCTOR ]
