XP132A0265SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz
1000
SWITCHING TIME vs. DRAIN CURRENT
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1%
Capacitance:C (pF)
Switching Time:t (ns)
tf
100
td
（off）
1000
Ciss
Coss
Crss
td
（on）
,tr
100
0
-5
-10
-15
-20
10
-0.1
-1
-10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
-10
Vds=-10V, Id=-3A
-20
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Gate-Source Voltage:Vgs (V)
-8
Reverse Drain Current:Id (A)
-15
-6
Vgs＝-5V
-10
-2.5V
-5
0.5V
-4
-2
0
0
10
20
30
40
50
0
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal Resistance:γs(t)
11
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
754
TOREX [ TOREX SEMICONDUCTOR ]
