Power MOS FET
NP-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.065Ω (max)
NUltra
High-Speed Switching
NSOP-8
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP132A0265SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.065Ω(Vgs=-5V)
: Rds(on)=0.12Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOP-8
■Pin Configuration
S
1
Ｓ
2
S
3
G
4
SOP-8
（TOP VIEW）
■Pin Assignment
PIN NUMBER
PIN NAME
Ｓ
Ｇ
Ｄ
FUNCTION
8
D
7
D
6
D
5
D
1 ∼ 3
4
5 ∼ 8
Source
Gate
Drain
■Equivalent Circuit
1
2
3
4
8
7
■Absolute Maximum Ratings
Ta=25:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
±12
-6
-20
-6
2.5
150
-55~150
UNITS
V
V
A
A
A
W
:
:
11
6
5
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
P-Channel MOS FET
(1 device built-in)
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
751
TOREX [ TOREX SEMICONDUCTOR ]
