■
Electrical Characteristics
Drain Current vs. Drain/Source Voltage
-20
-5V
-4.5V
Pulse Test, Ta=25℃
Drain Current vs. Gate/Source Voltage
-20
Ta=-55℃
125℃
Vds=-10V, Pulse Test
-3.5V
-3V
25℃
-16
-16
-4V
Drain Current :Id (A)
-12
-2.5V
Drain Current :Id (A)
-12
-8
-2V
-8
-4
Vgs=-1.5V
-4
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0
0
-1
-2
-3
-4
-5
Drain / Source Voltage :Vds (V)
Gate / Source Voltage :Vgs (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
Drain/Source On-State Resistance :Rds (on) (Ω)
Drain/Source On-State Resistance :Rds (on) (Ω)
0.2
Pulse Test, Ta=25℃
Drain/Source On-State Resistance
vs. Drain Current
1
Pulse Test, Ta=25℃
0.16
0.12
-3A
Id=-5A
Vgs=-2.5V
u
0.1
-4.5V
0.08
0.04
0
0
-2
-4
-6
-8
-10
0.01
0
-5
-10
-15
-20
Gate/Source Voltage :Vgs (V)
Drain Current :Id (A)
Drain / Source On-State Resistance
vs. Ambient Temp.
Drain/Source On-State Resistance :Rds (on) (Ω)
0.2
Pulse Test
Gate / Source Cut Off Voltage Variance
vs. Ambient Temp.
0.6
Vds=-10V, Id=-1mA
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
150
0.16
Id=-5A
0.4
0.2
0
-0.2
-0.4
-0.6
0.12
Vgs=-2.5V
-3A
0.08
-3A, -5A
-4.5V
0.04
0
-50
0
50
100
-50
0
50
100
150
Ambient Temp. :Topr (℃)
Ambient Temp. :Topr (℃)
391
TOREX [ TOREX SEMICONDUCTOR ]
