XP132A1275SR
■
Electrical Characteristics
Power MOS FET
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = - 20 , Vgs = 0V
Vgs =
±
12 , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 3A , Vgs = - 4.5V
Id = - 3A , Vgs = - 2.5V
Id = - 3A , Vds = - 10V
If = - 5A , Vgs = 0V
- 0.5
0.06
0.092
8
- 0.85
- 1.1
MIN
TYP
MAX
- 10
±
1
- 1.2
0.075
0.115
Ta=25°C
UNITS
µA
µA
V
Ω
Ω
S
V
Dynamic characteristics
PARAMETER
SYMBOL
Ciss
Coss
Crss
Vds = - 10V , Vgs = 0V
f = 1 MHz
CONDITIONS
MIN
TYP
770
440
180
MAX
Ta=25°C
UNITS
pF
pF
pF
u
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
Vgs = - 5V , Id = - 3A
Vdd = - 10V
CONDITIONS
MIN
TYP
10
25
45
40
MAX
Ta=25°C
UNITS
ns
ns
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
50
MAX
UNITS
°C
/ W
390