XP132A11A1SR
■
Electrical Characteristics
Drain / Source Voltage vs. Capacitance
1
0000
Vgs=0V, f=1MHz, Ta=25℃
Power MOS FET
Switching Time vs. Drain Current
1000
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃
Switching Time:t (ns)
Capacitance:C (pF)
tf
1000
Ciss
Coss
Crss
100
td(off)
tr
td(on)
100
10
10
0
-5
-10
-15
-20
-25
-30
1
0
-2
-4
-6
-8
-10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate / Source Voltage vs. Gate Charge
-10
Vds=-10V, Id=-5A, Ta=25℃
Reverse Drain Current vs. Source / Drain Voltage
-20
Pulse Test, Ta = 25℃
Gate/ Source Voltage:Vgs (V)
-8
Reverse Drain Current:Idr (A)
-16
u
-6
-12
-4.5V
-4
-8
-2
-4
Vgs=0V, 4.5V
0
0
5
10
15
20
25
0
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a) = 50℃/W ( Implemented on a glass epoxy PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
388
TOREX [ TOREX SEMICONDUCTOR ]
