XP132A11A1SR
■
Electrical Characteristics
Power MOS FET
DC characteristics
Ta=25℃
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = - 30 , Vgs = 0V
Vgs =
±
20 , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 3A , Vgs = - 10V
Id = - 3A , Vgs = - 4.5V
Id = - 3A , Vds = - 10V
If = - 5A , Vgs = 0V
- 1.0
0.055
0.095
6
- 0.85
- 1.1
MIN
TYP
MAX
- 10
±
1
- 2.5
0.065
0.11
UNITS
µA
µA
V
Ω
Ω
S
V
Dynamic characteristics
Ta=25℃
PARAMETER
Input Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = - 10V , Vgs = 0V
f = 1 MHz
MIN
TYP
680
450
170
MAX
UNITS
pF
pF
pF
u
Output Capacitance
Feedback Capacitance
Switching characteristics
Ta=25℃
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
Vgs = - 5V , Id = - 3A
Vdd = - 10V
CONDITIONS
MIN
TYP
15
20
30
MAX
UNITS
ns
ns
ns
ns
20
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
50
MAX
UNITS
℃
/W
386
TOREX [ TOREX SEMICONDUCTOR ]
