XP131A1715SR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
40
5V
3V
Pulse Test, Ta=25℃
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
40
35
Pulse Test
35
30
4V
2V
2.5V
30
1.5V
Drain Current:Id (A)
25
20
15
10
5
Drain Current:Id (A)
25
20
15
125℃
Topr=25℃
10
5
-55℃
Vgs=1V
0
0
0.5
1
1.5
2
2.5
3
0
0
0.5
1
1.5
2
2.5
3
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance:Rds (on) (Ω)
0.03
0.025
0.02
0.015
0.01
0.005
0
0
1
2
3
4
5
Id=10A
5A
Pulse Test, Ta=25℃
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Drain-Source On-State Resistance:Rds (on) (Ω)
0.1
Pulse Test, Ta=25℃
Vgs=1.5V
2.5V
0.01
4.5V
0.001
0
10
20
30
40
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance:Rds (on) (Ω)
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
0.03
0.025
0.02
Vgs=1.5V
Id=5A
1.5A
2.5V
5A, 10A
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
Pulse Test，Ta=25℃
11
0.015
0.01
4.5V
5A, 10A
0.005
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Ambient Temp. :Topr (℃)
Ambient Temp. :Topr (℃)
713
TOREX [ TOREX SEMICONDUCTOR ]
