Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance : 0.012
Ω
(max)
NUltra
High-Speed Switching
NSOP-8
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP131A1715SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds (on) = 0.012Ω ( Vgs = 4.5V )
: Rds (on) = 0.015Ω ( Vgs = 2.5V )
: Rds (on) = 0.025Ω ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage
: 1.5V
High density mounting
: SOP-8
■Pin Configuration
S
１
S
２
S
３
G
４
SOP-8
（TOP VIEW）
■Pin Assignment
D
D
D
D
PIN NUMBER
PIN NAME
Ｓ
Ｇ
Ｄ
FUNCTION
８
７
６
５
1 ∼ 3
4
5 ∼ 8
Source
Gate
Drain
■Equivalent Circuit
１
２
３
４
N-Channel MOS FET
( 1 device built-in )
■Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Tch
Tstg
150
-55 ~ 150
O
11
UNITS
V
V
A
A
A
W
C
C
８
７
６
５
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
RATINGS
20
+8
10
40
10
2.5
O
( note ) : When implemented on a glass epoxy PCB
711
TOREX [ TOREX SEMICONDUCTOR ]
