XC61C
Series
■ELECTRICAL CHARACTERISTICS
VDF (T) = 0.8V to 6.0V ± 2%
VDF (T) = 2.6V to 5.0V ± 1%
Ta=25℃
CIRCUITS
PARAMETER
Detect Voltage
SYMBOL
VDF
CONDITIONS
VDF(T)=0.8V~1.5V *1
VDF(T)=1.6V~6.0V *2
MIN.
VDF(T)
x 0.98
VDF(T)
x 0.99
VDF
TYP.
MAX. UNITS
VDF(T)
x 1.02
VDF(T)
V
1
1
1
VDF(T)
x 1.01
VDF(T)=2.6V~5.0V *2
VDF(T)
VDF
V
VDF
x 0.08
Hysteresis Range
Supply Current
VHYS
ISS
V
x 0.02 x 0.05
VIN = 1.5V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
-
-
-
-
0.7
0.8
0.9
1.0
1.1
-
2.3
2.7
3.0
μA
2
1
3.2
3.6
-
Operating Voltage *1
Operating Voltage *2
VDF(T) = 0.8V to 1.5V
VDF(T) = 1.6V to 6.0V
0.7
0.7
0.10
0.85
-
1.0
3.0
5.0
6.0
7.0
-
6.0
10.0
VIN
V
-
VIN = 0.7V
VIN = 1.0V
VIN = 6.0V
VIN = 1.0V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
VIN = 8.0V
CMOS
0.80
2.70
-7.5
2.2
7.7
10.1
11.5
13.0
-10.0
10
-
-
N-ch VDS = 0.5V
3
4
Output Current *1
CMOS, P-ch VDS = 2.1V
-1.5
-
-
-
-
IOUT
mA
nA
N-ch VDS = 0.5V
3
Output Current *2
Leak Current
-
CMOS, P-ch VDS = 2.1V
VIN=6.0V, VOUT=6.0V*1
-2.0
-
100
4
-
-
Ileak
3
VIN=10.0V, VOUT=10.0V*2
N-ch Open Drain
10
Temperature
Characteristics
Delay Time
ΔVDF
ppm/
℃
-40℃ ≦ Topr ≦ 85℃
Inverts from VDR to VOUT
-
-
±100
-
-
Δ
Topr
･
V
DF
tDLY
0.03
0.20
ms
5
(VDR
→
VOUT inversion)
NOTE:
*1: Low Voltage: VDF(T)=0.8V~1.5V
*2: Standard Voltage: VDF(T)=1.6V~6.0V
VDF (T): Setting detect voltage
Release Voltage: VDR = VDF + VHYS
9/19
TOREX [ Torex Semiconductor ]
